Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures

Description

published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

Links & Downloads

1. 10.5353/th_b3155967
2. b3155967

Tags

Gallium nitride.

Semiconductors - Defects.

Epitaxy.

Additional Fields

Identifer	oai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/40144
Date	January 2005
Creators	Huang, Yan, 黃燕
Contributors	Fung, SHY, Beling, CD
Publisher	The University of Hong Kong (Pokfulam, Hong Kong)
Source Sets	Hong Kong University Theses
Language	English
Detected Language	English
Type	PG_Thesis
Source	http://hub.hku.hk/bib/B31559670
Rights	The author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
Relation	HKU Theses Online (HKUTO)