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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Near field imaging of gallium nitride nanowires for characterization of minority carrier diffusion

Baird, Lee G. January 2009 (has links) (PDF)
Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2009. / Thesis Advisor(s): Haegel, Nancy M. Second Reader: Luscombe, James. "December 2009." Description based on title screen as viewed on January 27, 2010. Author(s) subject terms: Transport imaging, minority carrier, GaN nanowires, diffusion length, near-field scanning optical microscopy, NSOM. Includes bibliographical references (p. 63-64). Also available in print.

Growth and characterisation of GaN

Li, Tian January 2002 (has links)
No description available.

GaN high-voltage transistors : an investigation of surface donor traps

Longobardi, Giorgia January 2015 (has links)
No description available.

Measurement of minority charge carrier diffusion length in Gallium Nitride nanowires using Electron Beam InducedCurrent (EBIC)

Ong, Chiou Perng. January 2009 (has links) (PDF)
Thesis (M.S. in Combat Systems Science and Technology)--Naval Postgraduate School, December 2009. / Thesis Advisor: Haegel, Nacy M. Second Reader: Karunasiri, Gamani. "December 2009." Description based on title screen as viewed on January 26, 2010. Author(s) subject terms: Minority charge carrier, diffusion length, GaN, nanowires, EBIC. Includes bibliographical references (p. 71-73). Also available in print.

Cathodoluminescence of gallium nitride /

Campo, Eva M., January 2003 (has links)
Thesis (Ph. D.)--Lehigh University, 2003. / Includes bibliographical references and vita.

Point defects in III-nitrides studied by optical detection of magnetic resonance /

Bozdog, Cornel, January 2001 (has links)
Thesis (Ph. D.)--Lehigh University, 2001. / Includes bibliographical references and vita.

Investigation of AlGaN films and nickel/AlGaN Schottky diodes using depth-dependent cathodoluminescence spectroscopy and secondary ion mass spectrometry

Bradley, Shawn Todd, January 2004 (has links)
Thesis (Ph. D.)--Ohio State University, 2004. / Title from first page of PDF file. Document formatted into pages; contains xxii, 182 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 173-182).

GaN-based free-standing microdisks and nanostructures

Zhang, Xuhui, 張旭輝 January 2014 (has links)
In this thesis, various micro- and nano-structures, fabricated by micro- and nanosphere lithography (NSL), were applied onto gallium nitride (GaN) based direct-bandgap semiconductors to develop optical micro-cavities supporting whispering gallery mode (WGM) lasing action. This work includes three major sections. The first section introduces the novel nanostructures patterned by NSL and discusses their characterization. The second section elaborates the free-standing microdisk (FSD) cavities supporting WGM lasing. Last section provides an effective approach for optimizing FSD system by replacing the interface layer. Novel nanostructures for various applications are fabricated by NSL. First we developed and demonstrated a drop-on-demand method for fabricating twodimensional (2D) photonic crystal (PhC) arrays. Different geometries, such as nano-pillar and nano-cone, were obtained with variant etching parameters. The GaN PhCs comprising nano-pillar array with diameter of 200 nm were fabricated by different nano-patterning methods, NSL, focused ion beam lithography (FIB), and E-beam lithography (EBL). The surface morphologies and optical properties of fabricated structures were evaluated by various characterization techniques, including scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, and transmission measurement. The NSL technique is regarded as a preferable approach in fabricating nanostructures. The FSD systems with diverse diameters of 1, 2, and 7 μm were prepared by laser lift-off (LLO) and microsphere lithography (MSL). The FSDs showed vertical and smooth sidewalls as confirmed by SEM images and served as an outstanding microcavities supporting WGM lasing. Optically pumped WGM lasing was obtained at room temperature for FSD systems. The lasing characteristics were fully studies. The thresholds were determined from the plots of PL peak intensity versus pumping energy density and the values were 5.01, 8.54, and 9.06 mJ/cm2 for FSDs with diameter of 1, 2, and 7 μm respectively. The remarkable quality (Q) factor of 2576 was achieved from 1 μm FSD. Anlysis for different thresholds and Q-factors were also discussed. By decreasing the FSD size, the number of lasing peaks is reduced to achieve single mode lasing due to the shrinkage of microdisk providing relatively large mode spacing. An elegant approach was conducted to improve the optical confinement in FSD system in the last section. The beneath layer, originally ITO, was replaced by a reflecting metallic Ni/Ag layer. The SEM images revealed that a thin FSD standing on metallic supporting layer was successfully fabricated. The WGM lasing was also obtained through optical pumping. Lasing mode centered at 430.0 nm has a threshold of 8.82 mJ/cm2 and a Q-factor of 1673. The free space range (FSR) was determined to be 3 nm. A comparison between FSD system with ITO layer and the one with NiAg layer indicated that the metallic layer can server as a reflecting layer and improved the optical confinement of the system. / published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

Nanoscale electrical characterization of gallium nitride

Zhu, Tongtong January 2011 (has links)
No description available.

The mechanism of luminescence in III-nitrides

Galtrey, Mark John January 2010 (has links)
No description available.

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