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Performance of devices made of large band-gap semiconductors, SiC and GaNOkayama, Taizo, January 2007 (has links)
Thesis (Ph. D.)--George Mason University, 2007. / Title from PDF t.p. (viewed Jan. 21, 2008). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 128. Includes bibliographical references (p. 122-127). Also available in print.
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Electrical and thermal analysis of gallium nitride HEMTsWang, Yuchia. January 2009 (has links) (PDF)
Thesis (M.S. in Applied Physics)--Naval Postgraduate School, June 2009. / Thesis Advisor(s): Weatherford, Todd R. "June 2009." Description based on title screen as viewed on July 14, 2009. Author(s) subject terms: gallium nitride, HEMT, high electron mobility transistor, Silvaco, ATLAS, modeling, transient, self-heating, pulse. Includes bibliographical references (p. 73-74). Also available in print.
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The activation energy for the sublimation of gallium nitrideMunir, Zuhair A. January 1963 (has links)
Thesis--University of California, Berkeley, 1963. / "UC-4 Chemsitry" -t.p. "TID-4500 (19th Ed.)" -t.p. Includes bibliographical references (p. 42-43).
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Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material, its Schottky contacts, P-N junctions and heterostructuresHuang, Yan January 2005 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.
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Microbridge tests on galium[sic] nitride and parylene-c thin films /Li, Zhiying. January 2010 (has links)
Includes bibliographical references (p. 96-103).
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Ultra-fast high temperature microwave processing of silicon carbide and gallium nitrideSundaresan, Siddarth G., January 2007 (has links)
Thesis (Ph.D.)--George Mason University, 2007. / Title from PDF t.p. (viewed Oct. 29, 2007). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 170. Includes bibliographical references (p. 160-169). Also available in print.
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Theoretical study of hydrogen-related defects in GaN /Ma, Qisheng, January 1999 (has links)
Thesis (Ph. D.)--Lehigh University, 2000. / Includes vita. Includes bibliographical references (leaves 16-19, 108-110, 157-159, 203-205, 270-272, 315-316, 337).
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RARE EARTH-DOPED GALLIUM NITRIDE FLAT PANEL DISPLAY DEVICESHEIKENFELD, JASON CHARLES January 2003 (has links)
No description available.
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Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructuresHuang, Yan, 黃燕 January 2005 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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Growth, doping and nanostructures of gallium nitrideCai, Xingmin., 蔡興民. January 2005 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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