Return to search

A CMOS LNA for 3.1-10.6GHz Ultra-Wideband

The objective of this thesis is aimed at the design of low noise amplifier (LNA) for
an ultra-wideband (UWB) receiver system using standard 0.18um CMOS process.
A two amplified stage topology is proposed in the low noise amplifier. The first stage
introduces inductively source degeneration, it can achieve wideband
input impedance matching. The second stage introduces traditional CS configuration, it can
improve the forward gain (S21). The second stage also used L-C section for output match.
In order to improve the gain at high frequency, we introduces the series peaking between the
first stage and second stage. We use the resistive-feedback between second stage and output, it can achieve wideband output impedance matching. The total power dissipation of the low noise amplifier is about 16.5mW at power supply 1.5 volt and the chip size is 920*940mm2. The simulated result shows that S11 is under -9dB, S22 is under -10dB, the forward gain S21 is 11.63dB~12.56dB at 3.1-10.6GHz, the reverse isolation S12 is under -32dB, and the noise figure is3.3dB~3.96dB.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0125111-154905
Date25 January 2011
CreatorsLin, Shin-Yang
ContributorsChia-Hsiung Kao, Tzyy-Sheng Horng, Ko -Chi Kuo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0125111-154905
Rightsoff_campus_withheld, Copyright information available at source archive

Page generated in 0.0017 seconds