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16 GS/s Continuous-Time ΣΔ Modulator in a 22 nm SOI Process : a Simulation and Feasibility Study

With a reference specification model in terms of 8 GS/s Sigma Delta Modulator in a 28 nm CMOS process consuming 890 mW, the purpose with this thesis is to construct a similar and simpler model but with higher specification demands. In a 22 nm SOI process with an input signal bandwidth of 500 MHz sampled at 16 GS/s with a power consumption below 2 W, the objective is to design a Continuous-Time Sigma Delta Modulator with verified simulated functionality on a transistor level basis. This specification is accomplished - with a power consumption in total of 75 mW. The design methodology is divided into an integrator part along with a quantizer and feedback DAC part. A top-down strategy is carried out starting with an ideal high level Verilog-A model for the complete system, followed by a hardware implementation on transistor level.

Identiferoai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-155781
Date January 2018
CreatorsÖberg, Eric, Kindeskog, Gustav
PublisherLinköpings universitet, Tekniska fakulteten, Linköpings universitet, Elektroniska Kretsar och System, Linköpings universitet, Tekniska fakulteten, Linköpings universitet, Elektroniska Kretsar och System
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeStudent thesis, info:eu-repo/semantics/bachelorThesis, text
Formatapplication/pdf
Rightsinfo:eu-repo/semantics/openAccess

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