The objective of the proposed research is to analyze the effects of total ionizing dose (TID) on highly scaled CMOS and Silicon-Germanium Heterojunction Bipolar Transistors (SiGE HBTs). TID damage is caused by a build-up of charge at sensitive Si-SiO₂ interfaces and may cause device or circuit failure. TID damage is due to an accumulation of radiation particle strikes seen in extreme environments, such as space.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/53108 |
| Date | 12 January 2015 |
| Creators | Fleetwood, Zachary E. |
| Contributors | Cressler, John D. |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
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