Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space, where maintaining high levels of performance in the presence of low temperatures and background radiation is paramount. This work will focus on the investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform. Tolerance will be quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening will be proposed and tested with the goal of improving the SEE sensitivity of the npn in this platform by reducing the charge collected by the subcollector in the event of a direct ion strike. To the author's knowledge, this work presents the first design and measurement results for this form of RHBD.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/28180 |
| Date | 08 April 2009 |
| Creators | Diestelhorst, Ryan M. |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Thesis |
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