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1	Silicon-germanium BiCMOS device and circuit design for extreme environment applications Diestelhorst, Ryan M. 08 April 2009 (has links) Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space, where maintaining high levels of performance in the presence of low temperatures and background radiation is paramount. This work will focus on the investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform. Tolerance will be quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening will be proposed and tested with the goal of improving the SEE sensitivity of the npn in this platform by reducing the charge collected by the subcollector in the event of a direct ion strike. To the author's knowledge, this work presents the first design and measurement results for this form of RHBD. RHBD Single event effects Bipolar transistors Silicon alloys Effect of temperature on Germanium Effect of temperature on Germanium Effect of radiation on Silicon alloys Effect of radiation on
2	Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology Ahmed, Adnan 19 July 2005 (has links) This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge. Heterojunction HBT Low-temperature DC characteristics SiGe Silicon-germanium Technology generation Static characteristics Cryogenic Scaling Silicon alloys Effect of temperature on Germanium Effect of temperature on Heterojunctions Effect of temperature on Low temperature engineering

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Silicon-germanium BiCMOS device and circuit design for extreme environment applications

Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology