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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

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Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology

Ahmed, Adnan 19 July 2005 (has links)
This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.
Heterojunction
HBT
Low-temperature
DC characteristics
SiGe
Silicon-germanium
Technology generation
Static characteristics
Cryogenic
Scaling
Silicon alloys Effect of temperature on
Germanium Effect of temperature on
Heterojunctions Effect of temperature on
Low temperature engineering

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