<p>Devices that can
process more information in reduced dimensions are essential for an
increasingly information- and efficiency-driven future. To this end,
nanocomposites are promising due
to their inherent multifunctional properties and special behavior at the nanoscale.
Vertically aligned nanocomposites (VANs) are particularly interesting because
of their ability to self-assemble into anisotropic nanostructures and high density
of heterointerfaces – characteristics which introduce unique functionalities
and offer exciting new avenues for device applications. However, a vast
majority of VAN systems are currently fabricated on single-crystal oxide substrates,
which may be cost-prohibitive at large scales and are generally incompatible
with the prevalent device fabrication techniques. Thus, integration of VAN thin
films on silicon becomes a critical step toward implementing VANs in a
well-established semiconductor manufacturing industry. </p>
<p>In this dissertation, the
viability of oxide-metal and nitride-metal VAN thin films integrated on silicon
substrates has been demonstrated through a set of unique buffer layer designs. For
the first three systems presented in this dissertation, namely, LaSrFeO<sub>4</sub>-Fe,
BaTiO<sub>3</sub>-Au, and BaTiO<sub>3</sub>-Fe, microstructural and physical property
(i.e. electrical, magnetic, and optical) analyses confirm their successful epitaxial
growth on silicon, with only minor differences compared to their counterparts
grown on single-crystal oxide substrates. For the fourth system, a new and
robust TiN-Fe VAN has been proposed and demonstrated. The new TiN-Fe VAN system
on Si exhibits superior magnetic properties and unusual optical properties. With
further growth optimization and/or patterning techniques, VAN thin film integration
on silicon presents itself as a feasible and cost-effective approach to
designing electronic, spintronic, photonic, and sensing devices.</p>
| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/15054201 |
| Date | 26 July 2021 |
| Creators | Matias Kalaswad (9371222) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/thesis/Integration_of_oxide-metal_and_nitride-metal_vertically_aligned_nanocomposites_on_silicon_toward_device_applications/15054201 |
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