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The properties of spin-on oxide in a mos system.

Thesis (M.Phil.)--Chinese University of Hong Kong. / Bibliography: leaves 161.

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_320945
Date January 1975
ContributorsLam, Hau-chung., Chinese University of Hong Kong Graduate School. Division of Electronics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, 3, 2, 1616, 6 leaves : ill., plates (part col.) ; 28 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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