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The properties of spin-on oxide in a mos system.January 1975 (has links)
Thesis (M.Phil.)--Chinese University of Hong Kong. / Bibliography: leaves 161.
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Some aspects on dielectric breakdown in metal-silicon dioxide-silicon capacitors.January 1974 (has links)
Lai Kam Kwong. / Thesis (M.Sc.)--Chinese University of Hong Kong. / Bibliography: leaves 86-89.
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Electrical characterization of Si-SiO2 interface for thin oxides /Hung, Kwok-kwong. January 1987 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1987.
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Silicon thin-films. I.Low-temperature-sublimed silicon films on sapphire and spinel substrates, II. A field effect study of the metal-insulator-semiconductor structure and its applications in notch networksWong, Peter Hung-Kei January 1972 (has links)
A study of the structural and electrical properties of low-temperature-sublimed silicon films indicates that they are characterized by a high density of grain boundaries, hence crystal defects. A trapping model has been proposed to explain the experimentally observed temperature-dependencies of resistivity and carrier concentration of these films.
The result shows that the defect density at the grain boundaries is of the order of 10¹² cmˉ², and that it is independent of the doping concentrations in the films.
It has been shown that the thin-film metal-insulator-semi-conductor (MIS) structure can be reduced to a transmission line problem by expressing the equivalent capacitance of the structure as a series combination of the depletion capacitance and the insulator capacitance.
The variations of both the capacitance and channel conductance of the MIS structure have been utilized to make notch filters in which the notch frequency can be varied over 200% by an external biasing voltage.
In view of the need for maintaining a constant null depth in the semiconductor notch filter under various biasing potentials, a new notch network has been proposed in which the optimal notch condition could be maintained simply by designing the ratios of the lengths and widths of the MIS structure to the appropriate values. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
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Electrical characterization of Si-SiO2 interface for thin oxides洪國光, Hung, Kwok-kwong. January 1987 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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Novel uses of titanium dioxide for silicon solar cells /Richards, Bryce Sydney. January 2002 (has links)
Thesis (Ph. D.)--University of New South Wales, 2002. / Also available online.
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Interfacial properties of thin film hetero-structure copper-oxides of hafnium-silicon /Park, Hyun Jung. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Dynamics of defects and dopants in complex systems si and oxide surfaces and interfaces /Kirichenko, Taras Alexandrovich. Banerjee, Sanjay, Hwang, Gyeong S., January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisors: Sanjay K. Banerjee and Gyeong S. Hwang. Vita. Includes bibliographical references.
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Novel uses of titanium dioxide for silicon solar cellsRichards, Bryce Sydney, Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW January 2002 (has links)
Titanium dioxide (TiO2) thin films have a long history in silicon photovoltaics (PV) as antireflection (AR) coatings due to their excellent optical properties and low deposition cost. This work explores several novel areas where TiO2 thin films could be use to enhance silicon (Si) solar cell performance while reducing device fabrication costs. Amorphous, anatase and rutile TiO2 thin films are deposited using ultrasonic spraydeposition (USD) and chemical vapour deposition (CVD) systems, both designed and constructed by the author. Initial experiments confirmed that no degradation in the bulk minority carrier lifetime (????bulk) occurred during high-temperature processing, although the stability of the USD-deposited TiO2 films was dependent on the furnace ambient. A major disadvantage of TiO2 AR coatings is that they afford little surface passivation. In this work, a novel method of achieving excellent surface passivation on TiO2-coated silicon wafers is presented. This involved growing a 6 nm-thick SiO2 layer at the TiO2:Si interface by oxidising the wafer after TiO2 film deposition. The increase in surface passivation afforded by the interfacial SiO2 layer results in a decrease in the emitter dark saturation current density (J0e) by nearly two orders of magnitude to 4.7 ??? 7.7 ??~ 10???14 A/cm2. This demonstrates the compatibility of the TiO2/SiO2 stack with high-efficiency solar cells designs. By varying the film deposition and annealing conditions, TiO2 refractive indices in the range of 1.726 ??? 2.633 (at ???? = 600 nm) could be achieved. Subsequently, a double-layer antireflection (DLAR) coating was designed comprised of low and high TiO2 refractive index material. The best experimental weighted average reflectance (Rw) achieved was 6.5% on a planar silicon wafer in air. TiO2 DLAR coatings are ideally suited to multicrystalline silicon (mc-Si) wafers, which do not respond well to chemical texturing. Modelling performed for a glass and ethyl vinyl acetate (EVA) encapsulated buried-contact solar cell indicated that a TiO2 DLAR coating afforded a 7% increase in the short circuit current density, when compared to a standard, commercially-deposited TiO2 single-layer AR coating. Finally, it is demonstrated that chemical reactions with phosphorus prevent TiO2 from acting as a successful phosphorus diffusion barrier or dopant source. The applicability of TiO2 thin films to various silicon solar cell structures is discussed.
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Electrical and physical analysis of ultra-thin in-situ steam generated (ISSG) SiO₂ and nitride/oxide stacks for ULSI application /Luo, Tien-ying, January 2000 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 120-134). Available also in a digital version from Dissertation Abstracts.
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