High dielectric constant barium doped titanium silicon oxide films with equivalent oxide thickness below 1 nm can be prepared by liquid phase deposition. We learn from this research that the deposition rate of titanium silicon oxide films can be much enhanced by nitric acid incorporation, and the dielectric constant of materials can be increased by the dipole polarization from barium. The key parameter for the deposition rate, refractive index, and the dielectric constant of barium doped titanium silicon oxide is the molarity of barium nitrate. The electrical properties can be improved effectively by thermal annealing treatments. The optimum equivalent oxide thickness of barium doped titanium silicon oxide thin film is 0.9 nm with the optical thickness of 7.4 nm. The high dielectric constant can reach 31.9 and the leakage current density is 5 ¡Ñ 10-6 A/cm2 at the electrical field intensity of 5 MV/cm, which has high potential application for the next generation MOSFET.

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 147-155). Available also in a digital version from Dissertation Abstracts.

published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

Thesis (Ph. D.)--University of Hong Kong, 1990.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 82-92). Also available in electronic format on the Internet.

This thesis examines melting in superheated silicon films in contact with SiO₂ under pulsed laser irradiation. An excimer-laser pulse was employed to induce heating of the film by irradiating the film through the transparent fused-quartz substrate such that most of the beam energy was deposited near the bottom Si-SiO₂ interface. Melting dynamics were probed via in situ transient reflectance measurements. The temperature profile was estimated computationally by incorporating temperature- and phase-dependent physical parameters and the time-dependent intensity profile of the incident excimer-laser beam obtained from the experiments. The results indicate that a significant degree of superheating occurred in the subsurface region of the film. Surface-initiated melting was observed in spite of the internal heating scheme, which resulted in the film being substantially hotter at and near the bottom Si-SiO₂ interface. By considering that the surface melts at the equilibrium melting point, the solid-phase-only heat-flow analysis estimates that the bottom Si-SiO₂ interface can be superheated by at least 220K during excimer-laser irradiation. It was found that at higher laser fluences (i.e., at higher temperatures), melting can be triggered internally. At heating rates of 10¹⁰ K/s, melting was observed to initiate at or near the (100)-oriented Si-SiO₂ interface at temperatures estimated to be over 300K above the equilibrium melting point. Based on theoretical considerations, it was deduced that melting in the superheated solid initiated via a nucleation and growth process. Nucleation rates were estimated from the experimental data using Johnson-Mehl-Avrami-Kolmogorov (JMAK) analysis. Interpretation of the results using classical nucleation theory suggests that nucleation of the liquid phase occurred via the heterogeneous mechanism along the Si-SiO₂ interface.

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 191-206).