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Fabrication of Si/InGaN Heterojunction Solar Cells by RF Sputtering Method: Improved Electrical and Optical Properties of Indium Gallium Nitride (InGaN) Thin Films

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:ohiou1490714042486824
Date15 June 2017
CreatorsJakkala, Pratheesh Kumar
PublisherOhio University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=ohiou1490714042486824
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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