Thin films of CuInSe2 can be completely converted into CuInS2 after annealing in elemental sulfur vapor. In this thesis, the sulfide conversion process was done in an MBE chamber and the film was exposed to a heated sulfur source. Our experiments showed that complete conversion of a 1.0 £gm-thick CuInSe2 film into CuInS2 was achieved when the film was annealed in a sulfur beam flux of 4.5x1016 atoms/cm2-sec at 450¢J for 5 minutes. This is the shortest conversion time ever reported for the same annealing temperature. The speed of conversion process depended on sulfur vapor flux, film crystallinity, and original film composition. Among them, the film composition was the most important factor. The presence of Cu2Se phase in Cu-rich CuInSe2 film enhances the sulfide conversion process and confirmed by KCN etching of a Cu-rich sample. The role of Cu2Se phase in sulfide conversion was investigated. The sulfide conversion mechanism also presented in this work.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825106-154239 |
| Date | 25 August 2006 |
| Creators | Liu, Chun-Ping |
| Contributors | Kuang-Yeu Hsieh, Bae-Heng Tseng, Li-Chung Yang, Ker-Chang Hsieh, Mau-Phon Houng, Cherng-Yuan Sun, Huey-Liang Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825106-154239 |
| Rights | off_campus_withheld, Copyright information available at source archive |
Page generated in 0.0022 seconds