We have studied by STM, SQUID, X-ray reflectivity, X-ray diffraction, optical absorption and XAS Fe(phen)2(NCS)2 and Fe{[3,5-dimethylpyrazolyl]3BH}2 samples deposited by thermal evaporation on Cu(100), Co(100) and SiO2 substrates, and compared with results on powder samples. We have confirmed the existence of the soft X-ray induced excited spin state trapping (SOXIESST), and investigated its properties, in particular dynamic aspects. The effect is sensitive to the intensity and the structure of the applied X-ray beam, and is non-resonant. We suggest that its efficiency is also governed by metal-ligand charge transfer states (MLCT). The study of single molecules has revealed that they could be switched by voltage pulses, and by this way building memristive devices, but only if the influence of the substrate is sufficiently reduced. We have then investigated thin films with the help from a simple thermodynamic model, and evidenced that the cooperativity was reduced and the transition temperature is modified (higher for Fe-phen, and lower for Fe-pyrz). Finally, we use these results to build multilayer vertical devices Au/Fe-phen/Au, and its electrical properties depends, according to our preliminary results, on the external stimuli (temperature, magnetic field). Notably, they present a "diode" effect at the spin transition.
| Identifer | oai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:tel-01062266 |
| Date | 19 November 2013 |
| Creators | Davesne, Vincent |
| Publisher | Université de Strasbourg |
| Source Sets | CCSD theses-EN-ligne, France |
| Language | English |
| Detected Language | English |
| Type | PhD thesis |
Page generated in 0.0022 seconds