<p>In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.</p><p>The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.</p><p>As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.</p>
Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:liu-11672 |
Date | January 2008 |
Creators | Wigblad, Dan |
Publisher | Linköping University, The Department of Physics, Chemistry and Biology, Institutionen för fysik, kemi och biologi |
Source Sets | DiVA Archive at Upsalla University |
Language | English |
Detected Language | English |
Type | Student thesis, text |
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