In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production. The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures. As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.

In this thesis, the lithium tantalite [LiTaO3, abbreviated to LT] thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating with sol-gel processing and rapid thermal processing. 1,3 propanediol was used as solvent to minimize the number of cycles of spin coating and drying processes to obtain the desired thickness of thin film. By changing the heating rate (600~3000¢J/min) and the heating temperature (500~800¢J), the effects of various processing parameters on the thin films growth are studied. In addition, the thermal isolation of detecting elements was achieved by the anisotropic wet etching of back silicon substrate. In order to reduce the thermal mass and thermal time constant of detector, the sensing element was built-up on a thin membrane. By changing the membrane thickness (20~350 £gm), the effects of various membrane thickness on the response of pyroelectric IR detector devices are studied also. Experimental results reveal that the heating rate will influence strongly on grain size, dielectricity, ferroelectricity and pyroelectricity of LT thin films. With the increase of heating rate, the grain size of LT thin film decreases slightly, and the c-axis orientation is enhanced. The relative dielectric constant (£`r ) of LT thin film increases from 28 up to 45.6, the dielectric loss (tan

<p>In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.</p><p>The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.</p><p>As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.</p>

<p>Thermistor material can be used to fabricate un-cooled IR detectors their figure of merit is the Temperature Coefficient of Resistance (TCR). Ge dots in Si can act as a thermistor material and they have a theoretical TCR higher than for SiGe layers but they suffer from intermixing of Si into the Ge dots. Ge dots were grown on unstrained or strained Si layers and relaxed or strained SiGe layers at temperatures of 550 and 600°C by reduced pressure chemical vapor deposition (RPCVD). Both single and multilayer structures where grown and characterized. To achieve a strong signal in a thermal detector a uniform shape and size distribution of the dots is desired. In this thesis work, an endeavor has been to grow uniform Ge dots with small standard deviation of their size. Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to characterize the size and shape distribution of Ge dots. Ge contents measured with Raman spectroscopy are higher at lower growth temperatures. Simulation of TCR for the most uniform sample grown at 600°C give 4.43%/K compared to 3.85%/K for samples grown at 650°C in a previous thesis work.</p><p>Strained surfaces increases dot sizes and make dots align in crosshatched pattern resulting in smaller density, this effect increases with increasing strain.</p><p>Strain from buried layers of Ge dots in a multilayer structure make dots align vertically. This alignment of Ge dots was very sensitive to the thickness of the Si barrier layer. The diameter of dots increase for each period in a multilayer structure. When dots are capped by a Si layer at the temperature of 600°C intermixing of Si into the Ge dot occurs and the dot height decrease.</p>

Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. It is therefore an outstanding candidate for the fastest switching, the highest power density, and the most efficient electronic devices obtainable, with applications in the RF power, automotive and aerospace industries. Lightweight diamond devices, capable of high temperature operation in harsh environments, could also be used in radiation detectors and particle physics applications where no other semiconductor devices would survive. The high defect and impurity concentration in natural diamond or high-pressure-high-temperature (HPHT) diamond substrates has made it difficult to obtain reliable results when studying the electronic properties of diamond. However, progress in the growth of high purity Single Crystal Chemical Vapor Deposited (SC-CVD) diamond has opened the perspective of applications under such extreme conditions based on this type of synthetic diamond. Despite the improvements, there are still many open questions. This work will focus on the electrical characterization of SC-CVD diamond by different measurement techniques such as internal photo-emission, I-V, C-V, Hall measurements and in particular, Time-of-Flight (ToF) carrier drift velocity measurements. With these mentioned techniques, some important properties of diamond such as drift mobilities, lateral carrier transit velocities, compensation ratio and Schottky barrier heights have been investigated. Low compensation ratios (ND/NA) &lt; 10-4 have been achieved in boron-doped diamond and a drift mobility of about 860 cm2/Vs for the hole transit near the surface in a lateral ToF configuration could be measured. The carrier drift velocity was studied for electrons and holes at the temperature interval of 80-460 K. The study is performed in the low-injection regime and includes low-field drift mobilities. The hole mobility was further investigated at low temperatures (10-80 K) and as expected a very high mobility was observed. In the case of electrons, a negative differential mobility was seen in the temperature interval of 100-150K. An explanation for this phenomenon is given by the intervally scattering and the relation between hot and cold conduction band valleys. This was observed in direct bandgap semiconductors with non-equivalent valleys such as GaAs but has not been seen in diamond before. Furthermore, first steps have been taken to utilize diamond for infrared (IR) radiation detection. To understand the fundamentals of the thermal response of diamond, Temperature Coefficient of Resistance (TCR) measurements were performed on diamond Schottky diodes which are a candidate for high temperature sensors. As a result, very high TCR values in combination with a low noise constant (K1/f) was observed.

Thermistor material can be used to fabricate un-cooled IR detectors their figure of merit is the Temperature Coefficient of Resistance (TCR). Ge dots in Si can act as a thermistor material and they have a theoretical TCR higher than for SiGe layers but they suffer from intermixing of Si into the Ge dots. Ge dots were grown on unstrained or strained Si layers and relaxed or strained SiGe layers at temperatures of 550 and 600°C by reduced pressure chemical vapor deposition (RPCVD). Both single and multilayer structures where grown and characterized. To achieve a strong signal in a thermal detector a uniform shape and size distribution of the dots is desired. In this thesis work, an endeavor has been to grow uniform Ge dots with small standard deviation of their size. Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to characterize the size and shape distribution of Ge dots. Ge contents measured with Raman spectroscopy are higher at lower growth temperatures. Simulation of TCR for the most uniform sample grown at 600°C give 4.43%/K compared to 3.85%/K for samples grown at 650°C in a previous thesis work. Strained surfaces increases dot sizes and make dots align in crosshatched pattern resulting in smaller density, this effect increases with increasing strain. Strain from buried layers of Ge dots in a multilayer structure make dots align vertically. This alignment of Ge dots was very sensitive to the thickness of the Si barrier layer. The diameter of dots increase for each period in a multilayer structure. When dots are capped by a Si layer at the temperature of 600°C intermixing of Si into the Ge dot occurs and the dot height decrease.

This diploma thesis is focused on the design of IP blocks for thermal camera. This termal camera is intended for plant research. The main part of the thermal camera is an infrared detector that detects a frequency in the range of 8 – 14 m. The analogue signal obtained is modified and subsequently digitized. The detector also includes a Peltier device which is designed for both detector cooling and heating, and is controlled by an external signal. The MicroZed development board implements IP blocks. The thermal camera is designed to be controlled from the MicroZed board. Device analysis is first described from the theoretical part to the design of IP blocks.

Approved for public release, distribution is unlimited / In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements. / Civilian, Department of Air Force