We present a comprehensive comparison of electrical properties of differently fabricated high
quality Schottky contacts on ZnO thin films grown by pulsed laser deposition. Thermally
evaporated Pd/ZnO Schottky contacts exhibit ideality factors as low as 1.06 due to their high
lateral homogeneity. The effective Richardson constant determined using these homogeneous
contacts is (7.7±4.8)A cm−2 K−2 close to the theoretical value of 32 A cm−2 K−2. However, their
rectification ratio is at most five orders of magnitude due to their comparably small barrier height
(≈0.7eV). The largest effective barrier height (1.11 eV) and rectification ratio(7×1010) was
obtained for reactively sputtered PdOx/ZnO Schottky contacts. Eclipse pulsed laser deposited
IrOx/ZnO Schottky contacts were found to combine very good lateral homogeneity (n≈1.1), with
a reasonably large barrier height (0.96 eV) and large rectification ratio (≈9 orders of magnitude).
Our results for differently fabricated Schottky contacts suggest that the barrier formation is highly
dependent on the presence of oxygen vacancies close to the interface and the different
compensation mechanisms involved.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31210 |
| Date | 11 August 2018 |
| Creators | Müller, Stefan, von Wenckstern, Holger, Schmidt, Florian, Splith, Daniel, Heinhold, Robert, Allen, Martin, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 1089-7550, 194506 |
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