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Reliability and Electrical Analysis on the Mechanical Strain of a-Si:H Thin Film Transistor under Varied Temperature

Amorphous silicon thin film transistor(a-Si TFT) and poly silicon thin film transistor(p-Si TFT) have already been used for making the plain switch of picture of
the liquid crystal display, especially that amorphous silicon thin film transistor has been widely applied in the large area display panel. And the traditional display would be replaced by flexible display for the convenience. When the a-Si TFT device is operated for a long time, the temperature of the device will increase thereupon, t is very important to probe into the change of the reliability in different temperature, in
addition, flexible display should bear the extra mechanical stress. In view of this, we will research the reliability and electrical analyses of a-Si:H Thin Film Transistor under mechanical strain and varied temperature.
The result shows that the degradation of reliability of a-Si TFT under direct current is more serious than that of alternating current. , And we use the change of density of state (DOS) to probe the mechanism. Because the active energy varies with the DOS, we measured the device at different temperature to get the active energy (Ea) to confirm the main degradation mechanism for a-Si TFT.
In order to investigate the relationship of degradation and temperature, we stressed the device at low temperature (77K), room temperature (300K), and high temperature (400K), respectively.The result shows that the degradation is more serious at high temperature due to the higher energy of the carriers.
And we also found that the degradation of a-Si TFT under tensile bending is more serious than flatting, especially in alternating current stress. Thus, under bending condition the degradation mechanisms are dependent on frequency and different with flat condition.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1007108-213618
Date07 October 2008
CreatorsWei, Yi-Feng
ContributorsAnn-Kuo Chu, Ting-Chang Chang, Mei-Ying Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1007108-213618
Rightsnot_available, Copyright information available at source archive

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