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Non-linear THz spectroscopy in semiconductor quantum structures

In this thesis the strong coupling of excitons with intense THz radiation in GaAs/AlGaAs and InGaAs/GaAs multi-quantum wells (MQW) and the strong coupling of electrons to phonons in InAs/GaAs quantum dots (QD) are investigated. Experimental studies in the field of non-linear terahertz (THz) spectroscopy were carried out using the narrowband THz emission of a free-electron laser (FEL). In the first part intra-excitonic transitions are pumped with intense THz radiation.

The THz-pump–near-infrared(NIR)-probe experiments are analysed focusing on the behaviour of the Autler-Townes (AT) splittings with increasing THz field strength. Furthermore measurements of the temperature dependence up to room temperature are discussed. With the help of a microscopic theory the contribution of higher lying intra-excitonic states to the lineshape and splitting of the heavy-hole absorption line is analysed at low temperatures. The second part is about the lifetime and dephasing time of polarons in InAs/GaAs QDs that was measured for inter-sublevel excitation in the THz spectral region (below the Reststrahlen band). Single electrons inside QDs strongly interact with phonons and form quasi-particles called polarons. The temperature dependence of the dephasing behavior and the contribution of pure dephasing is discussed.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:14-qucosa-154595
Date05 November 2014
CreatorsTeich, Martin
ContributorsTechnische Universität Dresden, Fakultät Mathematik und Naturwissenschaften, Prof. Dr. Manfred Helm, Prof. Dr. Manfred Helm, Prof. Dr. Thomas Dekorsy
PublisherSaechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:doctoralThesis
Formatapplication/pdf

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