UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a
Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035<x<0.83. Such
layer was deposited by employing a continuous composition spread approach relying on the ablation
of a single segmented target in pulsed-laser deposition. The photo response signal is provided
from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was
tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes
fabricated from indium-rich part of the sample, for which an internal gain mechanism could be
identified. VC 2016 AIP Publishing LLC.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:23547 |
| Date | 06 August 2018 |
| Creators | Zhang, Zhipeng, von Wenckstern, Holger, Lenzner, Jörg, Lorenz, Michael, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0003-6951, 1077-3118, 123503 |
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