The goal of this thesis study is to develop an activated reactive evaporation
(ARE) system and to demonstrate its utility by fabricating-alternating current thin-film
electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation
in an activated gas. The main ARE system components are three thermal evaporation
sources, a microwave power supply, an electron cyclotron resonance plasma
(ECR) source, a substrate heater/controller, a film thickness monitor, and a leak
valve for gas flow control.
Ga���0���:Eu ACTFEL devices are fabricated using the ARE system. The maximum
Ga���O: deposition rate is approximately 2 nm/s. As-deposited films are transparent,
insulating, and amorphous with an index of refraction of 1.68 and an optical
bandgap of 4.25-4.9 eV. Ga���O��� films are typically amorphous until annealed above
1000��C in a furnace or by rapid thermal annealing. However, when hydrothermal
annealing is employed, Ga���O��� films crystalize at temperatures as low as 450��C.
Electrical and optical characterization indicates that the Ga���O���:Eu ACTFEL devices
have very little charge transfer and emit very dim, orange-red electroluminescence
with an emission peak of about 615 nm. / Graduation date: 2001
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/32754 |
| Date | 18 July 2000 |
| Creators | Yokoyama, Tomoe |
| Contributors | Wager, John F. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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