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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Electrical characterisation of silicon-on-insulator structures

McDaid, Liam January 1989 (has links)
No description available.

A study of integrated semiconductor thin-film sensors on sio2/si substrate

Li, Bin, January 2001 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2001. / Includes bibliographical references.

Design and testing of a lateral field excited rate monitor for use in thin film deposition systems /

Sgambato, Kristopher, January 2009 (has links)
Thesis (M.S.) in Electrical Engineering--University of Maine, 2009. / Includes vita. Includes bibliographical references (leaves 110-113).

A study of integrated semiconductor thin-film sensors on sio2/si substrate

Li, Bin, 李斌 January 2001 (has links)
published_or_final_version / abstract / toc / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

Surface cleaning and thin film etching using high pressure and supercritical fluids /

Bakker, Geoffrey L., January 1996 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Includes bibliographical references.

Thin film transistors in polysilicon /

Qian, Feng, January 1988 (has links)
Thesis (Ph. D.)--Oregon Graduate Center, 1988.

Alternating-current thin-film electroluminescent device fabrication and characterization

Baukol, Beau 17 May 2001 (has links)
Graduation date: 2002

An n-sheet, state-space ACTFEL device model

Hitt, John C. 16 March 2001 (has links)
The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent impurity excitation/do-excitation occurring only at n sheets between the n + 1 layers. The state-space technique is a structured approach in which the ACTFEL device physics implementation is separated from the ACTFEL measurement circuit electrical response, resulting in a set of coupled, first-order differential equations which are numerically evaluated. The device physics implementation begins with electron injection from phosphor/insulator interfaces and band-to-band impact ionization. Phosphor layer space charge generation via band-to-band impact ionization and subsequent hole trapping, trap-to-band impact ionization, and shallow donor trap emission are then added to the model. Finally, impact excitation and radiative relaxation are added to the model to account for ACTFEL device optical properties. The utility of the n-sheet, state-space ACTFEL device model is demonstrated in simulations which verify hypotheses regarding ACTFEL device measured characteristics. The role of phosphor layer hole trapping and subsequent thermionic emission in SrS:Cu ACTFEL device EL thermal quenching is verified via simulation. Leaky ACTFEL device insulators are shown to produce high luminance but low efficiency. A novel space charge estimation technique using a single transferred charge curve is presented and verified via simulation. Hole trapping and trap-to-band impact ionization are shown to produce realistic overshoot in C-V curves, and each results in a different phosphor layer space charge distribution. DC coupling of the sense capacitor used in the measurement circuit to the applied voltage source is required for the generation of ACTFEL device electrical offset, as verified by simulation. Shallow donors are identified as a probable SrS:Ce ACTFEL device leakage charge mechanism. A field-independent emission rate time constant model is shown to yield realistic ZnS:Mn ACTFEL device leakage charge trends. / Graduation date: 2001

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Yokoyama, Tomoe 18 July 2000 (has links)
The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply, an electron cyclotron resonance plasma (ECR) source, a substrate heater/controller, a film thickness monitor, and a leak valve for gas flow control. Ga���0���:Eu ACTFEL devices are fabricated using the ARE system. The maximum Ga���O: deposition rate is approximately 2 nm/s. As-deposited films are transparent, insulating, and amorphous with an index of refraction of 1.68 and an optical bandgap of 4.25-4.9 eV. Ga���O��� films are typically amorphous until annealed above 1000��C in a furnace or by rapid thermal annealing. However, when hydrothermal annealing is employed, Ga���O��� films crystalize at temperatures as low as 450��C. Electrical and optical characterization indicates that the Ga���O���:Eu ACTFEL devices have very little charge transfer and emit very dim, orange-red electroluminescence with an emission peak of about 615 nm. / Graduation date: 2001

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Abu-Dayah, Ahmad I. 27 April 1993 (has links)
Graduation date: 1993

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