Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method

Description

Zugl.: Erlangen, Nürnberg, Univ., Diss., 2007

Links & Downloads

1. http://d-nb.info/989883353/04

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/246653345
Date	January 2007
Creators	Sakwe, Sakwe Aloysius
Publisher	Aachen Shaker
Source Sets	OCLC
Language	English
Detected Language	English