This paper investigates the device behavior of a novel pseudo tri-gate ultrathin channel vertical MOSFET with source/drain tie (S/D tie), the PTG-SDT VMOS. The S/D tie (SDT) of this novel device circumvents short channel effect (SCEs). A double- surround-gate (the mid-gate and the spacer gate) is also presented to investigate the effect of S/D tie. According to the 2D simulation, three kinds of pseudo vertical MOSFETs are now proposed. The first one is to investigate the device characteristics of the new PTG-SDT VMOS. Our proposed structure also mitigates self-heating effect (SHEs), thereby enhancing the drain drive current and the thermal stability. Owing to its ultrathin channel (Tsi = 10 nm), the PTG-SDT VMOS has a very low subthreshold swing of 60 mV/dec, for channel lengths from 90 nm down to 40 nm. It is also found to control drain-induced barrier lowing (DIBL) and to have an excellent Gm of 4.5 mS/£gm at the channel length 40 nm. The second one, we proposed the ultrathin channel pseudo tri-gate vertical MOSFET with natural source/drain tie (NSDT), the big source/drain tie (BSDT), the SDT and the without source/drain tie (WSDT) VMOS. The PTG VMOS of this novel structure circumvents short channel effects (SCEs). A new natural S/D tie (N-SDT) is also presented to investigate of the PTG VMOS. According to 2D simulation, the PTG-NSDT also show the excellent thermal dissipated such as the lattice temperature in the drain-on-top configuration and drain-on-bottom configuration were improved 47% and 66% respectively, thereby enhancing the ON-state and OFF-state current ratio. In addition, the dependence of GIDL current on body bias and temperature is characterized and discussed when the source and drain interchanged. Although the PTG VMOS keep the double-surround-gate and S/D tie structure, the design flow is more simplify even increase the drain drive current and immunity the SHEs.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0723109-003834 |
| Date | 23 July 2009 |
| Creators | Tsai, Ying-chieh |
| Contributors | Chun-Hsing Shih, Yao-Tsung Tsai, Wen-Kuan Yeh, James B. Kuo, Jyi-Tsong Lin |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723109-003834 |
| Rights | unrestricted, Copyright information available at source archive |
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