Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, electrically conductive bond. This paper documents work conducted to model the effect of patterning in causing pressure non-uniformities across the wafer and its effect on the subsequent fracture response. A finite element model was created that revealed pattern-dependent local pressure variations of more than a factor of three. This variation is consistent with experimental observations of bond quality across individual wafers A cohesive zone model was used to investigate the resulting effect of non-uniform bond quality on the fracture behavior. A good, qualitative agreement was obtained with experimental observations of the load-displacement response of bonds in fracture tests. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3828 |
| Date | 01 1900 |
| Creators | Spearing, S. Mark, Tsau, Christine H., Schmidt, Martin A. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 918454 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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