by Pun Kong-Pang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 94-[96]). / Acknowledgement --- p.i / Abstract --- p.iii / List of Tables --- p.vii / List of Figures --- p.viii / Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Role of Device Simulation --- p.2 / Chapter 1.2 --- Classification of Device Models --- p.3 / Chapter 1.3 --- Sections of a Typical Simulator --- p.6 / Chapter 1.4 --- Arrangement of This Thesis --- p.7 / Chapter 2 --- Classical Physical Model --- p.9 / Chapter 2.1 --- Carrier Densities --- p.12 / Chapter 2.2 --- Space Charge --- p.14 / Chapter 2.3 --- Carrier Mobilities --- p.15 / Chapter 2.4 --- Generation and Recombination --- p.17 / Chapter 2.5 --- Modeling of Device Boundaries --- p.20 / Chapter 2.6 --- Limits of Classical Device Modeling --- p.22 / Chapter 3 --- Computational Aspects --- p.23 / Chapter 3.1 --- Normalization --- p.24 / Chapter 3.2 --- Discretization --- p.26 / Chapter 3.2.1 --- Finite Difference Method --- p.26 / Chapter 3.2.2 --- Finite Element Method --- p.27 / Chapter 3.3 --- Nonlinear Systems --- p.28 / Chapter 3.3.1 --- Newton's Method --- p.28 / Chapter 3.3.2 --- Gummel's Method and its modification --- p.29 / Chapter 3.3.3 --- Comparison and discussion --- p.30 / Chapter 3.4 --- Linear System and Sparse Matrix --- p.32 / Chapter 4 --- Cubic Spline Wavelet Collocation Method for PDEs --- p.34 / Chapter 4.1 --- Cubic spline scaling functions and wavelets --- p.35 / Chapter 4.1.1 --- Approximation for a function in H2(I) --- p.43 / Chapter 4.2 --- Wavelet interpolation --- p.45 / Chapter 4.2.1 --- Interpolant operator Ivo in Vo --- p.45 / Chapter 4.2.2 --- Interpolation operator IWjf in Wj --- p.47 / Chapter 4.3 --- Derivative Matrices --- p.51 / Chapter 4.3.1 --- First derivative matrix --- p.51 / Chapter 4.3.2 --- Second derivative matrix --- p.53 / Chapter 4.4 --- Wavelet Collocation Method for Solving Device Equations --- p.55 / Chapter 4.4.1 --- Steady state solution --- p.57 / Chapter 4.4.2 --- Transient solution --- p.58 / Chapter 4.5 --- Reducing Collocation Points --- p.59 / Chapter 4.5.1 --- Error evaluation --- p.59 / Chapter 4.5.2 --- Deleting collocation points --- p.61 / Chapter 5 --- Numerical Results --- p.64 / Chapter 5.1 --- P-N Junction Diode --- p.64 / Chapter 5.1.1 --- Steady state solution --- p.69 / Chapter 5.1.2 --- Transient solution --- p.76 / Chapter 5.1.3 --- Convergence --- p.79 / Chapter 5.2 --- Bipolar Transistor --- p.81 / Chapter 5.2.1 --- Boundary Model --- p.82 / Chapter 5.2.2 --- DC Solution --- p.83 / Chapter 5.2.3 --- Transient Solution --- p.89 / Chapter 6 --- Conclusions --- p.92 / Bibliography --- p.94
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322709 |
| Date | January 1997 |
| Contributors | Pun, Kong-Pang., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, x, 94, [2] leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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