Abstract
Anisotropic wet etching is one of the key technologies for the microstructure fabrication in Micro Electro Mechanical Systems (MEMS). Agitation technique is one of the key parameters to affect significantly the quality of silicon anisotropic wet etching, which includes the etch rate and surface roughness. In general, magnetic stirring is used during silicon anisotropic wet etching operation. The ultrasonic agitation and add surfactant have been to replaced and to proceed a series of experiment for KOH solution and TMAH solution in this study.
The results show that the ultrasonic agitation can reduce the surface roughness and achieve the high-quality etching surface, its roughness even is only about Ra 47.5Å. Besides, the etch rate is also increased slightly. But it is easily to cause the damage of the microstructure. The addition of anionic surfactant to the KOH solution without any agitation condition can achieve the same at the etching performance of the ultrasonic agitation.
The addition of anionic surfactant and nonionic surfactant to the TMAH solution without any agitation condition can achieve the same at the etching performance of the ultrasonic agitation. TMAH solution adds nonionic surfactant not only improves the surface roughness, but also retards the phenomenon of the undercut.
Keyword¡Ganisotropic wet etching, magnetic stirring, ultrasonic, surfactant
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701103-110919 |
| Date | 01 July 2003 |
| Creators | Chen, Po-Ying |
| Contributors | Yuang-Cherng Chiou, Rong-Tsong Lee, Chii-Rong Yang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701103-110919 |
| Rights | unrestricted, Copyright information available at source archive |
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