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The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.

Identiferoai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-91731
Date January 2013
CreatorsKakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik
PublisherLinköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeArticle in journal, info:eu-repo/semantics/article, text
Formatapplication/pdf
Rightsinfo:eu-repo/semantics/openAccess
RelationApplied Physics Letters, 0003-6951, 2013, 102:13, s. 132113-

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