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Development of a Balun with Suspending Structure by MEMS Technology

Balun is a key component in radio frequency (RF) circuits. The conventional Si-based planar spiral balun presented a high insertion loss. To solve this problem, this thesis firstly develops a Si-based suspending spiral balun using electrochemical deposition and surface micromachining technology for the fourth generation of wireless communication system.
To reduce the power dissipation of the conventional Si-based planar spiral balun, thesis utilized a suspending structure to reduce the power loss through the substrate and dielectric layer. The fabricated suspending spiral balun are constructed by three bottom GSG electrodes, thirty three supporting copper vias and a suspending spiral copper conducting layer. The main fabrication processes in this research including: (1) four thin-film deposition processes, (2) four photolithography processes, (3) two etching processes and (4) two copper electroplating processes. In addition, this thesis used the commercial software (Ansoft HFSS) to analysis the high frequency characteristic of Si-based suspending spiral balun.
The finished Si-based suspending spiral balun were measured by a commercial network analyzer under 2~8 GHz testing frequency range. Based on the measurement results, the value of insertion loss is 1.26 dB at 5.2 GHz, magnitude imbalanced is lower than 0.86 dB, phase imbalanced is less than 3.4 degree and CMRR is more than 30 dB. Finally, this thesis successfully develops a Si-based suspending spiral balun using MEMS technology for the fourth generation wireless communication system.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1116111-120100
Date16 November 2011
CreatorsDeng, Yu-Ting
ContributorsChih-Wen Kuo, I-Yu Huang, Ying-Chung Chen
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1116111-120100
Rightsuser_define, Copyright information available at source archive

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