M-plane (101 ¡Â0) ZnO thin films were grown on m-plane sapphire (101 ¡Â0) substrates by RF magnetron sputtering. We varied the RF power, working pressure, and O2/Ar ratio to obtain the best growth conditions. Structural properties were investigated by X-ray diffraction(XRD). XRD measurements showed that the crystal orientation of ZnO films was non-polar m-plane (101 ¡Â0). In addition, photoluminescence (PL) spectrum showed the bandgap energy of ZnO films was about 3.24 eV. PL spectrum showed zinc vacancy signal for films grown in oxygen rich condition. Carrier concentration was measured by hall measurement as well as FTIR spectrometry. The results showed the carrier concentration calculated by optical measurements was higher than hall measurements. One possibility for this could be the band tail at the bottom of conduction band. This band tail can make the effective mass larger and thus influencing the optical carrier concentration.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0805110-175647 |
| Date | 05 August 2010 |
| Creators | Hsieh, Ming-fong |
| Contributors | Chih-Hsiung Liao, Der-Jun Jang, Yung-Sung Chen, Li-Wei Tu, Min-Hsiung Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-175647 |
| Rights | not_available, Copyright information available at source archive |
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