Auxiliary power supply (APS) plays a key role in ensuring the safe operation of the main circuit elements including gate drivers, sensors, controllers, etc. in medium voltage (MV) silicon carbide (SiC)-based converter systems. Such a converter requires APS to have high insulation capability, low common-mode coupling capacitance (Ccm ), and high-power density. Furthermore, considering the lifetime and simplicity of the auxiliary power supply system design in the MV converter, partial discharge (PD) free and multi-load driving ability are the additional two factors that need to be addressed in the design. However, today’s state-of-the-art products have either low power rating or bulky designs, which does not satisfy the demands. To improve the current designs, this thesis presents a 1 MHz isolated APS design using gallium nitride (GaN) devices with MV insulation reinforcement.
By adopting LCCL-LC resonant topology, the proposed APS is able to supply multiple loads simultaneously and realize zero voltage switching (ZVS) at any load conditions. Since high reliability under faulty load conditions is also an important feature for APS in MV converter, the secondary side circuit of APS is designed as a regulated stage. To achieve MV insulation (> 20 kV) as well as low Ccm value (< 5 pF), a current-based transformer with a single turn structure using MV insulation wire is designed. Furthermore, by introducing different insulated materials and shielding structures, the APS is capable to achieve different partial discharge inception voltages (PDIV). In this thesis, the transformer design, resonant converter design, and insulation strategies will be detailly explained and verified by experiment results.
Overall, this proposed APS is capable to supply multiple loads simultaneously with a maximum power of 120 W for the sending side and 20 W for each receiving side in a compact form factor. ZVS can be realized regardless of load conditions. Based on different insulation materials, two different receiving sides were built. Both of them can achieve a breakdown voltage of over 20 kV. The air-insulated solution can achieve a PDIV of 6 kV with Ccm of 1.2 pF. The silicone-insulated solution can achieve a PDIV of 17 kV with Ccm of 3.9 pF. / M.S. / Recently, 10 kV silicon carbide (SiC) MOSFET receives strong attention for medium voltage applications. Asit can switch at very high speed, e.g. > 50 V/ns, the converter system can operate at higher switching frequency condition with very small switching losses compared to silicon (Si) IGBT [8]. However, the fast dv/dt noise also creates the common mode current via coupling capacitors distributed inside the converter system, thereby introducing lots of electromagnetic interference (EMI) issues. Such issues typically occur within the gate driver power supplies due to the high dv/dt noises across the input and output of the supply. Therefore, the ultra-small coupling capacitor (<5 pF) of a gate driver power supply is strongly desired.[37]
To satisfy the APS demands for high power modular converter system, a solution is proposed in this thesis. This work investigates the design of 1 MHz isolated APS using gallium nitride (GaN) devices with medium voltage insulation reinforcement. By increasing switching frequency, the overall converter size could be reduced dramatically. To achieve a low Ccm value and medium voltage insulation of the system, a current-based transformer with a single turn on the sending side is designed. By adopting LCCL-LC resonant topology, a current source is formed as the output of sending side circuity, so it can drive multiple loads importantly with a maximum of 120 W. At the same time, ZVS can use realized with different load conditions. The receiving side is a regulated stage, so the output voltage can be easily adjusted and it can operate in a load fault condition. Different insulation solutions will be introduced and their effect on Ccm will be discussed. To further reduce Ccm, shielding will be introduced. Overall, this proposed APS can achieve a breakdown voltage of over 20 kV and PDIV up to 16.6 kV with Ccm<5 pF. Besides, multi-load driving ability is able to achieve with a maximum of 120 W. ZVS can be realized. In the end, the experiment results will be provided.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/101507 |
| Date | January 2020 |
| Creators | Yan, Ning |
| Contributors | Electrical and Computer Engineering, Dong, Dong, Rolando, Burgos, Sable, Dan M. |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Format | ETD, application/pdf, application/pdf |
| Rights | Attribution-NonCommercial-NoDerivatives 4.0 International, http://creativecommons.org/licenses/by-nc-nd/4.0/ |
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