The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and
after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal
stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO)
showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 ,
−0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After
annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the
offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface.
Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3
studied.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85021 |
| Date | 28 April 2023 |
| Creators | Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S.J. |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 2162-8777, 045001 |
Page generated in 0.0018 seconds