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Structural and optical characterization of Si/Ge quantum dots

<p>In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.</p><p>The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.</p><p>As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.</p>

Identiferoai:union.ndltd.org:UPSALLA/oai:DiVA.org:liu-11672
Date January 2008
CreatorsWigblad, Dan
PublisherLinköping University, The Department of Physics, Chemistry and Biology, Institutionen för fysik, kemi och biologi
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeStudent thesis, text

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