Both the conditions of the epitaxial growth of YBCO thin films on silicon and the MOS devices operation at 77 K are well known. So, we have defined the technological solutions for the monolithic integration of high temperature superconductor bolometers (YBCO) and amplifiers based on PMOS devices. We have replaced their Al metallization by a Pt/Ti structure. The drain and source contacts were obtained by the preliminary formation of Mo-Si compounds. The YBCO thin film was deposited on silicon using CeO2/Yttria-Stabilized-Zirconia (Y SZ) buffer layers and showed a Tc of 86K. The bolometers and the transistors were successfully tested separetely at 300K and 77K. The co-fabrication on the same silicon substrate of YBCO and PMOS devices is a very promising starting point for a new generation of integrated circuits combining the advantages of the superconductive properties of YBCO and electronics in silicon technolgy.
| Identifer | oai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:hal-00002866 |
| Date | 05 July 2004 |
| Creators | Huot, Guillaume |
| Publisher | Université de Caen |
| Source Sets | CCSD theses-EN-ligne, France |
| Language | French |
| Detected Language | English |
| Type | PhD thesis |
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