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Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film

The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized by optical microscopy, scanning electron microscopy, x-ray diffraction, and photoluminescence measurement. It was found that a thicker AlN buffer layer resulted in a higher crystalline quality of subsequently grown GaN films. The GaN with a thicker buffer layer has a narrower PL peak. Cracks were found in the GaN film which might be due to the formation of amorphous SiNx at the AlN and Si interface. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3713
Date01 1900
CreatorsZang, Keyan, Wang, Lianshan, Chua, Soo-Jin, Thompson, Carl V.
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeArticle
Format778081 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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