ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore, also less light sensitive. ZnO-based TFT can increase the field mobility, improve the opening of AMLCD pixel and the problem of photo-excited leakage current. Here we demonstrate ZnO-based TFT which was fabricated by sol-gel material through spin-coating deposition method. The process of spin-costing deposition provides a more efficient way for depositing device components and low cost than vacuum techniques. In the experiment we controlled the conductive and carrier concentration by different annealing temperature and different annealing equipment for optimizing our device characteristic. The material analysis of ZnO film is discussed by FTIR, SEM, and n&k. The electrical characteristic was measured by the I-V measurement system.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718106-130733 |
| Date | 18 July 2006 |
| Creators | Yu, Cheng-hong |
| Contributors | Po-Tsun Liu, Ting-Chang Chang, Mei-Ying Chang, An-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718106-130733 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0016 seconds