Abstract
In this study, copper oxide thin films prepared by DC reactive magnetron sputtering using a Cu target were studied. By changing the oxygen partial pressure ratios and sputtering power and deposition temperatures during sputtering, we obtained copper oxide thin films with different properties. The structures of copper oxide thin films were characterized by glancing incident angle X-ray diffraction. Clear crystal orientation at (002) plane were observed at 50% and 60% oxygen partial pressure ratio. The preferred orientation at (111) plane were observed with heating substrate to 200¢J. The optical and electrical properties of cupric oxide thin films were measured by UV-VIS spectrophotometer and four-point probe system. The cupric oxide thin films deposited with heating substrate to 200¢J exhibited the resistivity of 0.77£[-cm and optical band gap of 1.57 eV.
Keywords¡G
cupric oxide, thin film, magnetron sputtering, band gap
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0707111-143207 |
| Date | 07 July 2011 |
| Creators | Chen, Yun-Cheng |
| Contributors | Chao-Kuei Lee, Fang-Zheng Lin, Ann-Kuo Chu, Jing-Yuan Lin, Li-Yin Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707111-143207 |
| Rights | campus_withheld, Copyright information available at source archive |
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