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Fabrication and Characterizations of Copper Oxide Thin Films by DC Reactive Magnetron Sputtering

Abstract
In this study, copper oxide thin films prepared by DC reactive magnetron sputtering using a Cu target were studied. By changing the oxygen partial pressure ratios and sputtering power and deposition temperatures during sputtering, we obtained copper oxide thin films with different properties. The structures of copper oxide thin films were characterized by glancing incident angle X-ray diffraction. Clear crystal orientation at (002) plane were observed at 50% and 60% oxygen partial pressure ratio. The preferred orientation at (111) plane were observed with heating substrate to 200¢J. The optical and electrical properties of cupric oxide thin films were measured by UV-VIS spectrophotometer and four-point probe system. The cupric oxide thin films deposited with heating substrate to 200¢J exhibited the resistivity of 0.77£[-cm and optical band gap of 1.57 eV.
Keywords¡G
cupric oxide, thin film, magnetron sputtering, band gap

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0707111-143207
Date07 July 2011
CreatorsChen, Yun-Cheng
ContributorsChao-Kuei Lee, Fang-Zheng Lin, Ann-Kuo Chu, Jing-Yuan Lin, Li-Yin Chen
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707111-143207
Rightscampus_withheld, Copyright information available at source archive

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