Core-shell nanowire LEDs are light emitting devices which, due to a high aspect
ratio, have low substrate sensitivity, allowing the possibility of low defect density GaN
light emitting diodes. Current growth techniques and physical non-idealities make the
production of high conductivity p-type GaN for the shell region of these devices difficult.
Due to the structure of core-shell nanowires and the difference in conductivity between ntype and p-type GaN, the full junction area of a core-shell nanowire is not used
efficiently. To address this problem, a series of possible doping profiles are applied to
the core of a simulated device to determine effects on current crowding and overall
device efficiency. With a simplified model it is shown that current crowding has a
possible dependence on the doping in the core in regions other than those directly in
contact with the shell. The device efficiency is found to be improved through the use of
non-constant doping profiles in the core region with particularly large efficiency
increases related to profiles which modify portions of the core not in contact with the
shell
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/41206 |
| Date | 07 July 2011 |
| Creators | Connors, Benjamin James |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Thesis |
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