The work investigates the selective deposition of cobalt oxide via atomic layer deposition. Methoxysilanes chlorosilane and poly(trimethylsilylstyrene) self-assembled monolayers are utilized to prevent wetting of water and cobalt bis(N-tert butyl, N'-ethylpropionamidinate) from the substrate, thereby controlling nucleation on the substrate and providing a pathway to enable selective deposition of cobalt oxide. Sr and Al are deposited atop the oxide films to scavenge oxygen and yield carbon-free cobalt metal films. Thermal reduction of the oxide layer in the presence of CO and H 2 was also investigated as an alternative. Finally, we demonstrate control over the tunability of the coercivity of the resultant films by controlling the reduction conditions.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:ch1-qucosa-207142 |
| Date | 22 July 2016 |
| Creators | Nallan, Himamshu, Ngo, Thong, Posadas, Agham, Demkov, Alexander, Ekerdt, John |
| Contributors | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
| Publisher | Universitätsbibliothek Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject |
| Format | application/pdf, text/plain, application/zip |
| Source | AMC 2015 – Advanced Metallization Conference |
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