A study of deep levels of the emitter region of a
heterojunction bipolar transistor is investigated using deep
level transient spectroscopy (DLTS), deep level admittance
spectroscopy (DLAS), thermally stimulated capacitance
(TSCAP), and capacitance-voltage (C-V) profiling. The DX
center, with an activation energy of 0.45 eV, is the only
deep level detected. By varying the DLTS rate window and
filling pulse widths, DX is found to be comprise of two
closely spaced DX centers, denoted DX1 and DX2. A positive
peak observed in the DLTS spectra is attributed to electron
capture, not minority carrier emission, and, thus, is an
experimental artifact. Finally, the reduction of current gain
(β) at low collector current and the effect of the DX center
on the switching characteristics of HBTs are briefly
discussed. / Graduation date: 1993
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/37248 |
| Date | 10 July 1992 |
| Creators | Huang, Chun-ta |
| Contributors | Wager, John F. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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