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Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

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Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:15-qucosa-185496
Date28 October 2015
CreatorsYoshida, Masayuki, Matsumoto, Satoru, Tanaka, Shuji
ContributorsYoshida Semiconductor Laboratory,, Keio University, Department of Electronics and Electrical Engineering, Universität Leipzig, Fakultät für Physik und Geowissenschaften
PublisherUniversitätsbibliothek Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:article
Formatapplication/pdf
SourceDiffusion fundamentals 16 (2011) 62, S. 1-2

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