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Arsenic diffusivity study by comparison of post-Surface and post-implant diffusion in silicon with Local Density Diffusion (LDD-) model approximation

The LDD model was first applied to Arsenic concentration profiles determined in surface diffusion experiments by Yoshida and
Arai [1]. The new method presented is based on a mathematical convolution with a delta-function-like concentration profile. By comparing the LDD approximation of post-surface diffusion with post-implant diffusion experiments, the same LDD model parameter r is found to hold for both experimental arrangements. This work found that post-implant diffusivity is concentration dependant and this might indicate an anomalous diffusion mechanism for Arsenic.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:15-qucosa-186124
Date29 October 2015
CreatorsWirbeleit, Frank
ContributorsGLOBAL FOUNDRIES,, Universität Leipzig, Fakultät für Physik und Geowissenschaften
PublisherUniversitätsbibliothek Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:article
Formatapplication/pdf
SourceDiffusion fundamentals 15 (2011) 3, S. 1-10

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