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Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

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1. urn:nbn:de:bsz:15-qucosa-185496
2. https://ul.qucosa.de/id/qucosa%3A13805
3. https://ul.qucosa.de/api/qucosa%3A13805/attachment/ATT-0/

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:13805
Date	January 2011
Creators	Yoshida, Masayuki, Matsumoto, Satoru, Tanaka, Shuji
Contributors	Yoshida Semiconductor Laboratory, Keio University, Universität Leipzig
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Source	Diffusion fundamentals 16 (2011) 62, S. 1-2
Rights	info:eu-repo/semantics/openAccess
Relation	urn:nbn:de:bsz:15-qucosa-178916, qucosa:13499