Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily doped deep-source drain and ultra-shallow junctions as required in advanced microelectronic technology. Experimental phosphorus dopant diffusion profiles in silicon are described by a rational function diffusion (RFD) model, based on direct solution of Fick’s equations and suitable for actual work in junction engineering.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:14143 |
| Date | January 2009 |
| Creators | Wirbeleit, Frank |
| Contributors | Globalfoundries, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Source | Diffusion fundamentals 9 (2009) 5, S. 1-7 |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:15-qucosa-179082, qucosa:13506 |
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