Return to search

Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering

Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray scattering was used to determine the diameter of the amorphous domains. The Guinier radius was found to vary from 9.5 Å to 13 Å irrespective of the partial pressure of nitrogen. This finding is quite surprising since crystallization of this material strongly depends on the partial pressure of nitrogen.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:14155
Date January 2008
CreatorsGruber, Wolfgang, Starykov, Oleksiy, Oppermann, Wilhelm, Schmidt, Harald
ContributorsTU Clausthal, Universität Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:article, info:eu-repo/semantics/article, doc-type:Text
SourceDiffusion fundamentals 8 (2008) 9, S. 1-7
Rightsinfo:eu-repo/semantics/openAccess
Relationurn:nbn:de:bsz:15-qucosa-179094, qucosa:13507

Page generated in 0.0604 seconds