This thesis reports on the growth and characterization of p-type
pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor
(MODFET) structures. A series of different p-type MODFET structures were grown
with a systematic variation of the indium mole fraction and quantum well width of
the InGaAs channel region. Extensive characterization of these samples using van
der Pauw Hall and photoluminescence measurements showed clear trends in carrier
mobility and quantum well quality with respect to the structure of the InGaAs region.
From this an optimal indium mole fraction and quantum well width were obtained.
Subsequent to material characterization, MODFET devices were fabricated
and characterized. The measured DC device performance was reasonable and
suggests that high quality p-type MODFETS should be obtainable with a properly
optimized device structure and fabrication process. / Graduation date: 1993
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/36617 |
| Date | 14 August 1992 |
| Creators | Schulte, Donald W. |
| Contributors | Arthur, John R., Goodnick, Stephen M. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
Page generated in 0.002 seconds