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Investigation of PAMBE grown InGaN/GaN double-heterojunction nanorods

The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods. XRD is used to analyze the In composition of film. PL, £g-PL, and CL are used to study the luminescence of InGaN and GaN, and calculation of In composition. For nanorods, the TEM and EDS are the tools to study the In composition and InGaN thickness. SEM is used to study the sample morphology. The work of EL has also been done in this thesis.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726106-145613
Date26 July 2006
CreatorsTu, Yen-Jie
ContributorsLi-Wei Tu, Chie-Tong Kuo, Der-Jun Jang, Tsu-Chiang Yen, Shiow-Fon Tsay
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-145613
Rightsnot_available, Copyright information available at source archive

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