<p dir="ltr">Porous silicon (po-Si) is a unique form of silicon (Si) that features tunable nanopores distributed throughout its bulk structure. While crystalline Si (c-Si) already boasts technological advantages, po-Si offers an additional key aspect with its large surface area relative to its small volume, making it highly conducive to surface chemistry. In this research, our focus centers on the design of a synaptic device based on po-Si, exploring its potential for neuromorphic hardware applications.</p><p><br></p><p dir="ltr">To begin, we delve into the analysis of several electrical properties of po-Si using density functional theory (ab initio/first principles) calculations. Notably, we discover the presence of intra-pore dangling states within the bandgap region of po-Si. Although po-Si is known for its higher bandgap compared to c-Si, resulting in low carrier density and increased resistance, the existence of these dangling states significantly impacts its electronic transport.</p><p><br></p><p dir="ltr">Additionally, we investigate the electric-field driven modulation of dangling bonds through controlled intra-pore Si-H bond dissociation. This modulation enables precise control over the density of dangling states, facilitating the tunability of po-Si conductance. Theoretically evaluating the current-voltage characteristics of our proposed po-Si based synaptic devices, we determine the potential range of obtainable conductivity.</p><p><br></p><p dir="ltr">Finally, we evaluate the performance by integrating porous silicon nanoelectronics devices into neural networks. These devices exhibit superior synaptic plasticity, faster response times, and reduced power consumption compared to other synapses. The research indicates that poroussilicon devices are highly effective in neuromorphic systems, paving the way for more efficient and scalable neural networks. These advancements have significant practical and cost-effective implications for a wide range of applications, including pattern recognition, machine learning, and artificial intelligence.</p><p><br></p><p dir="ltr">Overall, our analyses reveal that the integration of po-Si based synaptic devices into the neural fabric offers a path towards achieving significantly denser and more energy-efficient neuromorphic hardware. With its tunable properties, large surface area, and potential for controlled conductance, po-Si emerges as a promising candidate for the development of advanced silicon based nano-electronic devices tailored for neuromorphic computing. As we delve deeper into the potentials of po-Si, the era of cognitive computing, inspired by the elegance of bio-mimetic neural networks, edges closer to becoming a reality.<br><br></p>
| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/26037304 |
| Date | 03 September 2024 |
| Creators | Orthi Sikder (9167615) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/thesis/Silicon_Based_Nano-electronic_Synaptic_Device_for_Neuromorphic_Hardware/26037304 |
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